inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUV48T description high voltage capability high current capability fast switching speed applications designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ulary suited for line-operated swtchmode applications such as: switching regulators inverters solenoid and relay drivers motor controls absolute maximum ratings(ta=25 ) symbol parameter value unit v ces collector-emitter voltage 850 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b base current-continuous 5 a i bm base current-peak 20 a p c collector power dissipation @t c =25 150 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUV48T electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1a; i b = 0; l= 125mh 400 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 2a 0.9 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a 1.6 v i ces collector cutoff current v ce = 850v;v be =-1.5v v ce = 850v;v be =-1.5v;t c =125 0.5 2.0 ma h fe dc current gain i c = 15a; v ce = 5v 6 f t current-gainbandwidth product i c = 1a; v ce = 10v 5 mhz c ob collector output capacitance i e = 0; v cb = 10v, f test = 1mhz 250 pf switching times; resistive load t on turn-on time i c = 10a; i b1 =-i b2 = 2a; v ce = 150v 0.5 s t s storage time 3.0 s t f fall time 0.5 s
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